Mass production of InAs Hall elements by MBE

被引：30

作者：

Shibasaki, I

机构：

[1] Corp. R. and D. Administration, Asahi Chemical Industry Co., Ltd., Fuji-city, Shizuoka 416

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

InSb Hall element; InAs Hall element; mass production MBE; InAs quantum well;

D O I：

10.1016/S0022-0248(96)00924-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Hall elements as mass production magnetic sensors are a new application area for thin film technology such as vacuum deposition and MBE. Highly sensitive InSb thin film Hall elements formed by vacuum deposition are often applied as magnetic field sensors for small DC brushless motors used in electronic equipment. InAs Hall elements developed and produced by MBE have high sensitivity and stability over a wide temperature range and have potential for the present and future applications required by many electronic systems. Here, we review the recent status of applications, production, and the good characteristics of InAs Hall elements for use as magnetic sensors. Our production MBE system has confirmed the feasibility of high yield, mass production of thin film InAs Hall elements.

引用

页码：13 / 21

页数：9

共 12 条

[1] HIGH-SENSITIVITY HALL ELEMENTS MADE FROM SI-DOPED INAS ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].