Ab initio electronic-structure calculations for α-(BEDT-TTF)2I3

被引：62

作者：

Ishibashi, S

Tamura, T

Kohyama, M

Terakura, K

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

[2] AIST, Res Inst Ubiquitous Energy Devices, UBIQEN, Ikeda, Osaka 5638577, Japan

[3] Hokkaido Univ, Creat Res Initiat Sousei, Sapporo, Hokkaido 0010021, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2006年 / 75卷 / 01期

关键词：

organic conductor; alpha-(BEDT-TTF)(2)I-3; ab initio calculation; electronic structure; Fermi surface;

D O I：

10.1143/JPSJ.75.015005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

[No abstract available]

引用

页数：2

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