Selective growth of vertical ZnO nanowires on ZnO:Ga/Si3N4/SiO2/Si templates

被引：11

作者：

Hsu, CL ^{[1
]}

Chang, SJ

Hung, HC

Lin, YR

Lu, TH

Tseng, YK

Chen, IC

机构：

[1] MingChi Univ Technol, Dept Elect Engn & Elect Engn, Atsugi, Kanagawa 24301, Japan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[4] Ind Technol Res Inst, Mat Res Labs, Hsinchu 310, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 06期

关键词：

D O I：

10.1116/1.2101600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High density vertical single crystal ZnO nanowires were selectively grown on ZnO:Ga/Si3N4/SiO2/Si templates at various temperatures by a two-step oxygen injection process of self-catalyzed vapor-liquid-solid (VLS) technology. It was found that tips of the ZnO nanowires are hexagonal. It was also found that average length of the ZnO nanowires increased while the average tip diameter of the ZnO nanowires decreased as the growth temperature increased. Furthermore, it was found that the ZnO nanowires grown at 500 degrees C were '' tube-shaped '' while the ZnO nanowires grown at 700 degrees C were '' cone-shaped.'' Photoluminescence (PL). x-ray diffraction (XRD), and energy depersive x-ray (EDX) results all indicate that the quality of our ZnO nanowires is good. (c) 2005 American Vacuum Society.

引用

页码：2292 / 2296

页数：5

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