Laser ablation deposition of metal oxides/nitrides films at room temperature

被引：15

作者：

Misra, A ^{[1
]}

Thareja, RK

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

[2] Indian Inst Technol, Ctr Laser Technol, Kanpur 208016, Uttar Pradesh, India

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 06期

关键词：

D O I：

10.1063/1.371226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the role of laser ablated plume size for deposition of aluminum films in oxygen and nitrogen ambient atmosphere. The films were deposited at room temperature and were characterized using x-ray diffraction, scanning electron microscopy, and micro-Raman. The formation of aluminum nitride is attributed to breakdown of nitrogen gas due to high shock temperature and subsequent mixing with aluminum plasma in the shocked region. (C) 1999 American Institute of Physics. [S0021-8979(99)00218-2].

引用

页码：3438 / 3441

页数：4

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