GaAs Core-Shell Nanowires for Photovoltaic Applications

被引：401

作者：

Czaban, Josef A. ^{[1
]}

Thompson, David A. ^{[1
]}

LaPierre, Ray R. ^{[1
]}

机构：

[1] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

来源：

NANO LETTERS | 2009年 / 9卷 / 01期

关键词：

MOLECULAR-BEAM EPITAXY; CARRIER MULTIPLICATION; IMPACT IONIZATION; SOLAR-CELLS; GROWTH; EFFICIENCY; ARRAYS;

D O I：

10.1021/nl802700u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

引用

页码：148 / 154

页数：7

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