Vapor sensors based on optical interferometry from oxidized microporous silicon films

被引:74
作者
Gao, J [1 ]
Gao, T [1 ]
Li, YY [1 ]
Sailor, MJ [1 ]
机构
[1] Univ Calif San Diego, Dept Chem & Biochem, La Jolla, CA 92093 USA
关键词
D O I
10.1021/la015568f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Vapor sensors using thin porous silicon (PS) Fabry-Perot films were prepared and characterized. The detection method used in this work involves measurement of the intensity of reflected light from a microporous Si film as a function of analyte concentration. Analyte adsorption within the pores of the film causes the Fabry-Perot fringes to shift to higher wavelengths as a result of an increase in the average refractive index of the PS layer. Two transduction methodologies are employed: measurement of the intensity of reflected light using a low-power red diode laser source, and measurement of the spectrum of reflected light in the wavelength range 400-1000 nm, using a white light (tungsten) source. The effect of PS film thickness and porosity on sensitivity are systematically studied. A detection limit of 250 ppb for the analyte ethanol in a nitrogen gas carrier stream has been demonstrated. Experimental results suggest that capillary condensation is in part responsible for the high sensitivity of these vapor sensors.
引用
收藏
页码:2229 / 2233
页数:5
相关论文
共 65 条
[1]  
ADAMSON AW, 1990, PHYSICAL CHEM SURFAC, P58
[2]   The application of porous silicon to optical waveguiding technology [J].
Arrand, HF ;
Benson, TM ;
Sewell, P ;
Loni, A ;
Bozeat, RJ ;
Arens-Fischer, R ;
Krüger, M ;
Thönissen, M ;
Lüth, H .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (06) :975-982
[3]   Solvent detection using porous silicon optical waveguides [J].
Arrand, HF ;
Benson, TM ;
Loni, A ;
Arens-Fischer, R ;
Krueger, MG ;
Thoenissen, M ;
Lueth, H ;
Kershaw, S ;
Vorozov, NN .
JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) :119-123
[4]  
Arwin H, 2000, PHYS STATUS SOLIDI A, V182, P515, DOI 10.1002/1521-396X(200011)182:1<515::AID-PSSA515>3.0.CO
[5]  
2-W
[6]   POROUS SILICON AS A MATERIAL IN MICROSENSOR TECHNOLOGY [J].
BARRET, S ;
GASPARD, F ;
HERINO, R ;
LIGEON, M ;
MULLER, F ;
RONGA, I .
SENSORS AND ACTUATORS A-PHYSICAL, 1992, 33 (1-2) :19-24
[7]   ADSORBATE EFFECTS ON PHOTOLUMINESCENCE AND ELECTRICAL-CONDUCTIVITY OF POROUS SILICON [J].
BENCHORIN, M ;
KUX, A ;
SCHECHTER, I .
APPLIED PHYSICS LETTERS, 1994, 64 (04) :481-483
[8]   Color changes in thin porous silicon films caused by vapor exposure [J].
Bjorklund, RB ;
Zangooie, S ;
Arwin, H .
APPLIED PHYSICS LETTERS, 1996, 69 (20) :3001-3003
[9]  
BRECHT A, 1992, ANALUSIS, V20, P135
[10]   OPTICAL PROBES AND TRANSDUCERS [J].
BRECHT, A ;
GAUGLITZ, G .
BIOSENSORS & BIOELECTRONICS, 1995, 10 (9-10) :923-936