Spin-flop magnetoresistance in Gd/Co multilayers

被引:46
作者
Colino, J
Andrés, JP
Riveiro, JM
Martínez, JL
Prieto, C
Sacedón, JL
机构
[1] Univ Castilla La Mancha, Dept Fis Aplicada, E-13071 Ciudad Real, Spain
[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 09期
关键词
D O I
10.1103/PhysRevB.60.6678
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-temperature magnetotransport and magnetization measurements have been performed at high magnetic fields in samples of a layered artificial ferrimagnet: multilayers made by sequential sputtering of Gd and Co. Strong interfacial reaction leads to severe alloying and, if the Co layer is nominally thick enough (greater than or equal to 4 nm), the samples are mainly comprised of alternated pure Co and Gd0.7Co0.3 alloy layers. Such spin systems are antiferromagnetically coupled at the interface region, and the compensation temperature of this "giant" ferrimagnet is determined by the thickness of Gd and Co layers. Both magnetization and magnetoresistance measurements indicate the so-called spin-flop transition at temperatures below the Curie point of the alloy layer (similar to 189 K). Spin-flop magnetoresistance resembles the anisotropic magnetoresistance of ferromagnets except for the field range in which it develops: H>10(3)-10(4) Oe for modulation length of similar to 15 nm. The effect arises in the Co layers from anisotropic carrier scattering. [S0163-1829(99)07633-X].
引用
收藏
页码:6678 / 6684
页数:7
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