Surface structure of GaN(0001) in the chemical vapor deposition environment

被引：42

作者：

Munkholm, A

Stephenson, GB

Eastman, JA

Thompson, C

Fini, P

Speck, JS

Auciello, O

Fuoss, PH

DenBaars, SP

机构：

[1] Argonne Natl Lab, Div Chem, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Div Sci Mat, Argonne, IL 60439 USA

[3] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[5] AT&T Labs Res, Florham Pk, NJ 07932 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.83.741

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first observation of the atomic-scale structure of the GaN(0001) surface in the metalorganic chemical vapor deposition environment. Measurements were performed using in situ grazing-incidence x-ray scattering. We determined the surface equilibrium phase diagram as a function of temperature and ammonia partial pressure, which contains two phases with 1 X 1 and (root 3 X 2 root 3)R30 degrees symmetries. The (root 5 X 2 root 5)R30 degrees phase is found to have a novel "missing row" structure with 1/3 of the surface Ga atoms absent.

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页码：741 / 744

页数：4

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