Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities

被引：39

作者：

Folliot, H

Lynch, M

Bradley, AL

Dunbar, LA

Hegarty, J

Donegan, JF

Barry, LP

Roberts, JS

Hill, G

机构：

[1] Univ Dublin Trinity Coll, Dept Phys, Dublin 2, Ireland

[2] Dublin City Univ, Dept Elect Engn, Dublin 9, Ireland

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1455694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on two-photon absorption (TPA) photocurrent in semiconductor microcavities. We experimentally show a substantial increase in the TPA photocurrent generated, at resonance, in a GaAlAs/GaAs microcavity designed for TPA operation at similar to890 nm. An enhancement factor of similar to12000 of the photocurrent is obtained via the microcavity effect, which could have an important impact on the use of TPA devices for high speed switching and sampling applications. Our results also show the implications of the cavity photon lifetime on autocorrelation traces measured using TPA in semiconductor microcavities. (C) 2002 American Institute of Physics.

引用

页码：1328 / 1330

页数：3

共 6 条

[1] Autocorrelation and ultrafast optical thresholding at 1.5μm using a commercial InGaAsP 1.3μm laser diode [J].