Effect of contact area on synthesis of silicon carbide through carbothermal reduction of silicon dioxide

被引：28

作者：

Chen, SH

Lin, CI

机构：

[1] Department of Chemical Engineering, Natl. Taiwan Institute of Technology

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1997年 / 16卷 / 09期

关键词：

D O I：

10.1023/A:1018508525803

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：702 / 704

页数：3

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