Properties of CNx films prepared by PECVD

For this project, CN, films were prepared by the plasma-enhanced chemical vapour deposition (PECVD) method. Two kinds of substrate were chosen for film deposition: Cr-Ni-Mo steel (0.095 C, 17.25 Cr, 12.04 Ni, 2.49 Mo) and silicon. The substrates were prepared in the shape and size needed for the planned measurements. The surfaces for film deposition were polished and the substrates cleaned in organic solvents by means of ultrasound before treatment. The following CN, film properties were investigated: thickness, internal stress, dependence of the friction coefficient on the load, refraction index and contamination. For the investigation of these properties the following methods or instruments were chosen: Talystep profilometer, the optical method of stress measurement based on macroscopic sample bending, tribometer HEF, ellipsometry, Rutherford backscattering spectroscopy (RBS) and electron probe microanalysis (EPMA). The thickness values fell in the range of hundredths of nanometres. The compressive stress of the films was below 0.8 GPa. The friction coefficient decreased when the load value increased. There was remarkable oxygen contamination in the prepared films. (C) 1999 Elsevier Science S.A. All rights reserved.