Localization of triplet excitons and biexcitons in the two-dimensional semiconductor (CH3C6H4CH2NH3)2PbBr4

被引：45

作者：

Goto, T ^{[1
]}

Makino, H

Yao, T

Chia, CH

Makino, T

Segawa, Y

Mousdis, GA

Papavassiliou, GC

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[2] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[3] Natl Hellen Res Fdn, Inst Theoret & Phys Chem, GR-11635 Athens, Greece

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.73.115206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured emission spectra under selective excitation and time resolved photoluminescence spectra of a single crystal with a perovskite type structure (CH3C6H4CH2NH3)(2)PbBr4 at low temperature, and clarified that triplet excitons generated in the PbBr monolayer are recombined after localization in a random potential. The localized triplet exciton has a lifetime below 2.3 ns. From emission spectra under selective excitation of a strong nanosecond pulsed light, it is suggested that free and localized biexcitons are generated by inelastic collision of two free and localized triplet excitons, respectively. Moreover, it is concluded that the localized biexciton is annihilated radiatively leaving a localized triplet exciton.

引用

页数：5

共 20 条

[1] DYNAMICS OF INTER-GROWTH-ISLAND AND INTRA-GROWTH-ISLAND EXCITON LOCALIZATION IN GAAS SINGLE QUANTUM-WELLS [J].

FUJIWARA, K ;

KATAHAMA, H ;

KANAMOTO, K ;

CINGOLANI, R ;

PLOOG, K .

PHYSICAL REVIEW B, 1991, 43 (17) :13978-13982

[2] Excitons in a single two-dimensional semiconductor crystal of H3N(CH2)6NH3PbI4 [J].

Goto, T ;

Ohshima, N ;

Mousdis, GA ;

Papavassiliou, GC .

SOLID STATE COMMUNICATIONS, 2000, 117 (01) :13-16

[3] THERMODYNAMICS OF EXCITONIC MOLECULES IN SILICON [J].

GOURLEY, PL ;

WOLFE, JP .

PHYSICAL REVIEW B, 1979, 20 (08) :3319-3327

[4]

ISHIHARA T, 1995, OPTICAL PROPERTIES L, V1, P288

[5] Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4 [J].

Kato, Y ;

Ichii, D ;

Ohashi, K ;

Kunugita, H ;

Ema, K ;

Tanaka, K ;

Takahashi, T ;

Kondo, T .

SOLID STATE COMMUNICATIONS, 2003, 128 (01) :15-18

[6] THERMODYNAMICS OF BIEXCITONS IN A GAAS QUANTUM-WELL [J].

KIM, JC ;

WAKE, DR ;

WOLFE, JP .

PHYSICAL REVIEW B, 1994, 50 (20) :15099-15107

[7] Biexciton lasing in the layered perovskite-type material (C6H13NH3)2PbI4 [J].

Kondo, T ;

Azuma, T ;

Yuasa, T ;

Ito, R .

SOLID STATE COMMUNICATIONS, 1998, 105 (04) :253-255

[8] Induced absorption and spontaneous emission due to biexciton in two-dimensional semiconductor (CH3C6H4CH2NH3)2PbBr4 single crystal [J].

Makino, H ;

Goto, T ;

Yao, T ;

Mousdis, GA ;

Papavassillou, GC .

JOURNAL OF LUMINESCENCE, 2005, 112 (1-4) :54-57

[9] Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells [J].

Makino, T ;

Tamura, K ;

Chia, CH ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Koinuma, H .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :5929-5933

[10] Luminescence of localized biexcitons in Pb1-xCdxI2 mixed crystals [J].

Makino, T ;

Watanabe, M ;

Hayashi, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1996, 65 (09) :3049-3055

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