Formation mechanism and low-temperature instability of exciton rings

被引:123
作者
Butov, LV [1 ]
Levitov, LS
Mintsev, AV
Simons, BD
Gossard, AC
Chemla, DS
机构
[1] EO Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] MIT, Dept Phys, Ctr Mat Sci & Engn, Cambridge, MA 02139 USA
[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England
[5] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[6] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
基金
俄罗斯基础研究基金会; 美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.92.117404
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The macroscopic rings observed in the photoluminescence patterns of excitons in coupled quantum wells are explained by a mechanism of carrier imbalance, transport, and recombination. The rings originate from the spatial separation of p and n carriers, and occur at the interface of the p and n domains, where excitons are generated. We explore the states of excitons in the ring over a range of temperatures down to 380 mK and report a transition of the ring into a periodic array of aggregates, a new low-temperature ordered exciton state.
引用
收藏
页码:117404 / 1
页数:4
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