Study of the bending modulus of individual silicon nitride nanobelts via atomic force microscopy

被引:40
作者
Jing, GY
Ji, H
Yang, WY
Xu, J
Yu, DP [1 ]
机构
[1] Peking Univ, Sch Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Electron Microscopy Lab, Beijing 100871, Peoples R China
[3] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 82卷 / 03期
关键词
D O I
10.1007/s00339-005-3335-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Analysis of the bending modulus of individual silicon nitride nanobelts in elastic regime is reported here. The nanobelts have the size between 20 similar to 800 nm in width, and thickness 20 similar to 50 nm. Atomic force microscopy was used to image and to perform measurements of force versus bending displacement on individual nanobelts suspending over strips. The bending modulus E-b is deduced by comparison of the measured force curves on the substrate and on the suspending nanobelts. It is shown that the elastic modulus of the silicon nitride nanobelts is about 570 GPa, which is much larger than that of bulk and film of the silicon nitride material. The larger elastic modulus is ascribed to the fact there are less structural defects in the silicon nitride nanobelts.
引用
收藏
页码:475 / 478
页数:4
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