Localization-enhanced biexciton binding in semiconductors

被引：49

作者：

Langbein, W ^{[1
]}

Hvam, JM ^{[1
]}

机构：

[1] Tech Univ Denmark, Mikroelektr Centret, DK-2800 Lyngby, Denmark

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.59.15405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1-xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton.

引用

页码：15405 / 15408

页数：4

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