A comparative study of resist stabilization techniques for metal etch processing

被引:4
作者
Becker, G [1 ]
Ross, M [1 ]
Wong, S [1 ]
Minter, J [1 ]
Marlowe, T [1 ]
Livesay, WR [1 ]
机构
[1] Allied Signal Inc, Microelect & Technol Ctr, Columbia, MD 21045 USA
来源
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷
关键词
metal etch; resist stabilization; UV bake; electron beam stabilization;
D O I
10.1117/12.350164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool used in this study, an-ElectronCure(TM) system from AlliedSignal Inc., Electron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955-CM. For each of these resists the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resist remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also,presented. SEM analysis was also performed on the features after a complete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post-etch cleaning are presented for both stabilization methods. SEM inspection is also detailed: for the metal features after resist removal processing.
引用
收藏
页码:1126 / 1135
页数:10
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