Doped In-Ge-Te phase change memory featuring stable operation and good data retention

被引：45

作者：

Morikawa, T. ^{[1
]}

Kurotsuchi, K. ^{[1
]}

Kinoshita, M. ^{[1
]}

Matsuzaki, N. ^{[1
]}

Matsui, Y. ^{[1
]}

Fujisaki, Y. ^{[1
]}

Hanzawa, S. ^{[1
]}

Kotabe, A. ^{[1
]}

Terao, M. ^{[1
]}

Moriya, H.

Iwasaki, T.

Matsuoka, M. ^{[2
]}

Nitta, F. ^{[2
]}

Moniwa, M. ^{[2
]}

Koga, T. ^{[2
]}

Takaura, N. ^{[1
,2
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Tokyo 1858601, Japan

[2] Hitachi Ltd, Mech Engn Res Lab, Ibaraki 3120004, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418932

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te5, and we demonstrated 10-year retention at temperatures above 150 degrees C, which is the highest temperature ever reported.

引用

页码：307 / +

页数：2