Spin-valve effects in a semiconductor field-effect transistor: A spintronic device

被引：190

作者：

Gardelis, S ^{[1
]}

Smith, CG ^{[1
]}

Barnes, CHW ^{[1
]}

Linfield, EH ^{[1
]}

Ritchie, DA ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.7764

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a spintronic semiconductor field-effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two-dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occurring in direct propagation between contacts. [S0163-1829(99)04335-0].

引用

页码：7764 / 7767

页数：4

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