A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

被引：13

作者：

Borici, M. ^{[1
]}

Watling, J. R. ^{[1
]}

Wilkins, R. ^{[1
]}

Yang, L. ^{[1
]}

Barker, J. R. ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow GL2 8LT, Lanark, Scotland

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2003年 / 2卷 / 2-4期

关键词：

interface roughness scattering; electron transport; device simulation via Monte Carlo method;

D O I：

10.1023/B:JCEL.0000011418.90300.9b

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present paper the problem of interface roughness scattering is treated non-perturbatively by incorporating the effects of scattering as a boundary condition for the Boltzmann transport equation (BTE). This provides a basis for the development of a semi-classical model of the interface roughness scattering mechanism applicable to the Monte Carlo (MC) simulations of electron transport in the Si n-MOSFET. The model is based on the Boltzmann-Fuchs method for the solution of the BTE. This method has shown to be computationally efficient and is naturally suited to the semi-classical spirit of the BTE and its direct solution via the MC method.

引用

页码：163 / 167

页数：5

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