Novel Pb(Ti, Zr)O3(PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices

被引:26
作者
Yamakawa, K
Imai, K
Arisumi, O
Arikado, T
Yoshioka, M
Owada, T
Okumura, K
机构
[1] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4B期
关键词
flash lamp; FeRAM; ferroelectrics; crystallization; PZT; RTA; morphology;
D O I
10.1143/JJAP.41.2630
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel method of ferroelectric capacitor formation for Ferroelectric random access memory (FeRAM) embedded LSIs and one-transistor-type FeRAMs has been developed. Amorphous Pb(Ti,Zr)O-3(PZT) films were successfully transformed to the perovskite phase by a flash lamp technique with a crystallization time of 1.2 ms at a substrate temperature of 350degreesC. A flash lamp energy of 27 J/cm(2) was sufficient to form a ferroelectric crystal structure due to rapid thermal effects with little heat diffusion in the depth direction. This technique enabled PZT film crystallization in Pt/PZT/Pt structures on multi-Al wiring layers. Granular PZT grains were observed on Pt, Ru and RuO2 electrodes, which indicates that crystal growth begins from the film surfaces. Ferroelectric property was verified by the process at 350degreesC maximum temperature. PZT films were also crystallized directly on SiO2. This is useful for the fabrication of embedded FeRAM devices and 1Tr-type FeRAMs. The flash lamp process was found to have great potential for application to dielectric film formation, annealing processes and so on.
引用
收藏
页码:2630 / 2634
页数:5
相关论文
共 3 条
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[2]  
YAMAKAWA K, 1998, P ISAF, P159
[3]  
YAMAKAWA K, 2001, P ISIF 2001