Error rate of a charge qubit coupled to an acoustic phonon reservoir

被引:121
作者
Fedichkin, L [1 ]
Fedorov, A
机构
[1] Clarkson Univ, Dept Phys, Ctr Quantum Device Technol, Potsdam, NY 13699 USA
[2] Clarkson Univ, Dept Elect & Comp Engn, Potsdam, NY 13699 USA
来源
PHYSICAL REVIEW A | 2004年 / 69卷 / 03期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevA.69.032311
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We analyze decoherence of an electron in a double dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation processes, while for small tunneling rates, the virtual-phonon, dephasing processes dominate. Our results show that in common semiconductors, such as Si and GaAs, the latter mechanism determines the upper limit for the double-dot charge qubit performance measure.
引用
收藏
页码:032311 / 1
页数:4
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