Superconductivity-related insulating behavior

被引:196
作者
Sambandamurthy, G [1 ]
Engel, LW
Johansson, A
Shahar, D
机构
[1] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA
基金
以色列科学基金会; 美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.92.107005
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present the results of an experimental study of superconducting, disordered, thin films of amorphous indium oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field (B). We find that the high-B insulator exhibits activated transport with a characteristic temperature, T-I. T-I has a maximum value (T-I(p)) that is close to the superconducting transition temperature (T-c) at B=0, suggesting a possible relation between the conduction mechanisms in the superconducting and insulating phases. T-I(p) and T-c display opposite dependences on the disorder strength.
引用
收藏
页码:107005 / 1
页数:4
相关论文
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