Submicron P-channel (Al,Ga)As/(In,Ga)As HIGFET's

被引：2

作者：

Abrokwah, JK ^{[1
]}

Lucero, R ^{[1
]}

Hallmark, JA ^{[1
]}

Bernhardt, B ^{[1
]}

机构：

[1] MOTOROLA CPL,TEMPE,AZ 85284

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 07期

关键词：

D O I：

10.1109/16.595929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFET's have been optimized for application to high-performance complementary GaAs circuits. Major issues with submicron and deep submicron (L-g less than or equal to 0.5-mu m) P-channel HIGFET's have been the severe short-channel effects, such as high subthreshold leakage currents and high output conductances. With optimization of the p-type self-aligned implant schedule, control of impurity contamination at the substrate/buffer interfaces and increase of the resistivity of the unintentionally-doped GaAs buffers, high-performance submicron devices have been realized. Typically, 0.5-mu m P-HIGFET's yielded room temperature transconductances of 90 mS/mm, drain currents at V-gs = V-ds = -1.5 V of 63 mA/mm, and subthreshold leakage currents near 1 nA. Subthreshold slope of 90 mV/decade and output conductances under 5 mS/mm were realized.

引用

页码：1040 / 1045

页数：6