Ion implantation and annealing effects in silicon carbide

被引:69
作者
Heera, V
Skorupa, W
机构
来源
MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING | 1997年 / 438卷
关键词
D O I
10.1557/PROC-438-241
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
SiC is a promising semiconductor material for high-power/high-frequency and high-temperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beam induced crystallization and surface erosion.
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页码:241 / 252
页数:12
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