Principal component analysis of plasma harmonics in end-point detection of photoresist stripping

被引:13
作者
Koh, ATC [1 ]
Thornhill, NF [1 ]
Law, VJ [1 ]
机构
[1] Univ London Univ Coll, Dept Elect & Elect Engn, London WC1E 7JE, England
关键词
D O I
10.1049/el:19990930
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A principal component analysis (PCA) of plasma-generated harmonics monitored using a non-invasive ex-situ probe is reported. PCA trends due to gas pressure and RF power were demonstrated. Changes in harmonic levels during photoresist stripping have also been detected and were analysed with PCA to provide process end-point detection.
引用
收藏
页码:1383 / 1385
页数:3
相关论文
共 4 条
[1]   Harmonic characterisation of a plasma-tool using a diplexer [J].
Batty, I ;
Cooke, M ;
Law, VJ .
VACUUM, 1999, 52 (04) :509-514
[2]   Modeling of plasma etch systems using ordinary least squares, recurrent neural network, and projection to latent structure models [J].
Bushman, S ;
Edgar, TF ;
Trachtenberg, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (04) :1379-1389
[3]   Radio frequency diagnostics for plasma etch systems [J].
Bushman, S ;
Edgar, TF ;
Trachtenberg, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) :721-732
[4]   The process chemometrics approach to process monitoring and fault detection [J].
Wise, BM ;
Gallagher, NB .
JOURNAL OF PROCESS CONTROL, 1996, 6 (06) :329-348