ZnRh2O4:: A p-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d6 configuration

被引：94

作者：

Mizoguchi, H ^{[1
]}

Hirano, M ^{[1
]}

Fujitsu, S ^{[1
]}

Takeuchi, T ^{[1
]}

Ueda, K ^{[1
]}

Hosono, H ^{[1
]}

机构：

[1] JSt, ERATO, Hosono Transparent ElectroAct Mat, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1450252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that a ZnRh2O4 normal spinel with a band gap of similar to2.1 eV is a unique material as a p type wide-gap semiconductor. The electrical conductivity of the sputtered film was 0.7 S cm(-1) at 300 K with no intentional doping. The electronic structure was investigated by photoemission and inverse photoemission measurements and indicated that the band gap is composed mainly of ligand field splitting of an octahedrally coordinated Rh3+ octahedron between fully occupied t(2g)(6) and empty e(g)(0) sets. (C) 2002 American Institute of Physics.

引用

页码：1207 / 1209

页数：3

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