D- centres in low dimensions: The strong-confinement approach

被引：6

作者：

Busser, C

Proetto, CR

机构：

[1] CTR ATOM BARILOCHE, COMIS NACL ENERGIA ATOM, RA-8400 SAN CARLOS BARILOCHE, RIO NEGRO, ARGENTINA

[2] INST BALSEIRO, RA-8400 SAN CARLOS BARILOCHE, RIO NEGRO, ARGENTINA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 10期

关键词：

D O I：

10.1088/0953-8984/8/10/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Negatively charged centres (D-) formed in semiconductors by attaching a second electron to a shallow neutral hydrogenic donor (D-0) have been analysed in the quasi-zero- and quasi-one-dimensional limits. On the basis of the present and already known results for higher dimensions, it is proposed that D- ions support one and only one stable configuration which evolves continuously from the three-dimensional to the zero-dimensional limit.

引用

页码：L131 / L138

页数：8

共 23 条

[1]

Abramowitz M., 1970, HDB MATH FUNCTIONS

[2] FORMATION OF NEGATIVE-IONS IN MAGNETIC-FIELDS [J].