Highly efficient white-light-emitting diodes fabricated with short-wavelength yellow oxynitride phosphors

被引:223
作者
Xie, RJ
Hirosaki, N
Mitomo, M
Takahashi, K
Sakuma, K
机构
[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] Sharp Co Ltd, Adv Technol Res Labs, Hiroshima 7290474, Japan
[3] Fujikura Ltd, Opt Elect Lab, Chiba 2858550, Japan
基金
日本学术振兴会;
关键词
D O I
10.1063/1.2182067
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have already reported orangish yellow Ca-alpha-SiAlON:Eu2+ phosphors, and applied them to fabricate warm white light-emitting diodes (LEDs). In this letter, we report on greenish yellow Li-alpha-SiAlON:Eu2+ phosphors, and use them to create daylight when coupled to an InGaN blue LED chip (460 nm). The newly discovered Li-alpha-SiAlON:Eu2+ phosphors emit at shorter wavelengths of 573-577 nm under the 460 nm excitation, and exhibit a smaller Stokes shift than Ca-alpha-SiAlON:Eu2+ does. By using this short-wavelength yellow oxynitride phosphor, bright daylight emissions from white LEDs can be generated. Thus, highly efficient white LEDs with tunable white light can be fabricated with alpha-SiAlON:Eu2+ phosphors, enabling them for a wider range of applications. (c) 2006 American Institute of Physics.
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页数:3
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