Experimental results and modeling of noise coupling in a lightly doped substrate

While an in-depth experimental study of substrate noise coupling in an epi process has been reported [1], most research into substrate coupling in lightly doped bulk wafers has been limited to simulations without experimental confirmation. This work presents experimental noise coupling data for a lightly doped substrate, along with corresponding simulation results obtained using a compact model of the substrate. The results of this work provide a general understanding of noise coupling in lightly doped substrates and emphasize the layout dependence of such noise. Without an efficient simulation capability utilizing a compact model of the substrate, it is extremely difficult to predict how noise will couple to a circuit node.