Characterization of swift heavy ion tracks in CaF2 by scanning force and transmission electron microscopy

被引:88
作者
Khalfaoui, N
Rotaru, CC
Bouffard, S
Toulemonde, M
Stoquert, JP
Haas, F
Trautmann, C
Jensen, J
Dunlop, A
机构
[1] Univ Caen, CEA, CNRS, ENSICAEN,CIRIL, F-14070 Caen, France
[2] Lab InESS, F-67037 Strasbourg, France
[3] IRES, IN2P3, F-67037 Strasbourg, France
[4] Gesell Schwerionenforsch mbH, GSI, D-64291 Darmstadt, Germany
[5] Uppsala Univ, Angstrom Lab, Div Ion Phys, S-75121 Uppsala, Sweden
[6] Ecole Polytech, CEA, Solides Irradies Lab, F-91128 Palaiseau, France
关键词
scanning force microscopy; tapping mode; swift heavy ions tracks; CaF2;
D O I
10.1016/j.nimb.2005.06.220
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Single crystals of fluorite (CaF2) were exposed to various swift heavy ions (Ca up to U) of energy 1-11.1 MeV per nucleon, covering a large range of electronic stopping power S-e between 4.6 and 35.5 keV/nm. The irradiated (I 1 1) cleaved surfaces were investigated by means of scanning force microscopy in tapping mode. Nanometric hillocks produced by the ion projectiles were analyzed in terms of creation efficiency E-eff, diameter and height values, and diameter-height correlation. Hillock formation appears with a low efficiency above a Se threshold of similar to 5 keV/nm. The mean height of these hillocks is approximately constant (similar to 1 nm) between 5 and 10 keV/nm and increases linearly with Se above 10 keV/nm reaching 12.5 nm for the largest Se value investigated. Similarly, the efficiency grows versus Se achieving 100% for S-e > 13 keV/nm where each projectile produces an individual hillock. Above 13 keV/nm, the hillock height and diameter are strongly correlated. The diameter was deduced by graphical deconvolution of the scanning-tip curvature that is determined experimentally for each set of measurements. In the entire Se regime, the mean diameter exhibits a constant value of similar to 13 nm, which is significantly larger than 6 nm wide tracks observed by transmission electron microscopy. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:819 / 828
页数:10
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