Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films

被引：21

作者：

Georgobiani, AN

Gruzintsev, AN

Volkov, VT

Vorob'ev, MO

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 03期

关键词：

Oxide; Oxygen; Nitrogen; Zinc; Electrical Conductivity;

D O I：

10.1134/1.1461400

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the introduction of a nitrogen acceptor impurity when growing zinc oxide films can result in the formation of hole conduction only after annealing in atomic oxygen vapor. Annealing affects not only electrical properties but also the luminescence of ZnO:N. The bands in the photoluminescence spectrum, which are related to nitrogen, appear in the ultraviolet and visible regions. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：265 / 269

页数：5

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