Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

被引：122

作者：

Oka, T

Nagaosa, N

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, CERC, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.95.266403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group approach. We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semiconductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.

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页码：1 / 4

页数：4

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