Low resistance contacts to p-type GaN

被引：45

作者：

Kim, T

Khim, J

Chae, S

Kim, T

机构：

来源：

GALLIUM NITRIDE AND RELATED MATERIALS II | 1997年 / 468卷

关键词：

D O I：

10.1557/PROC-468-427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 x 10(-3) Omega . cm(2) was obtained after annealing. The metallization was e-beam evaporated on 2 mu m-thick p-GaN (similar to 9 x 10(16)/cm(3)) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.

引用

页码：427 / 430

页数：4