Room-temperature ferromagnetism in Mn-doped semiconducting CdGeP2 -: art. no. 047205

被引：89

作者：

Mahadevan, P ^{[1
]}

Zunger, A ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.88.047205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The chalcopyrite CdGeP2 doped with Mn have been recently found to exhibit room-temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d(5)) case. However, chalcopyrite semiconductors exhibit low-energy intrinsic defects. We show theoretically how ferromagnetism results from the interaction of Mn with hole-producing intrinsic defects.

引用

页数：4

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