Gate-voltage studies of discrete electronic states in aluminum nanoparticles

被引：310

作者：

Ralph, DC ^{[1
]}

Black, CT ^{[1
]}

Tinkham, M ^{[1
]}

机构：

[1] HARVARD UNIV,DIV ENGN & APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 21期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.78.4087

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the electronic spectra for different numbers of electrons in the same particle, (b) greatly improved resolution and qualitatively new results for spectra within superconducting particles, and (c) detailed studies of the gate-voltage dependence of the resonance level widths, which have directly demonstrated the effects of nonequilibrium excitations.

引用

页码：4087 / 4090

页数：4

共 21 条

[1] Chaos, interactions, and nonequilibrium effects in the tunneling resonance spectra of ultrasmall metallic particles [J].