Design and evaluation of AC-coupled, FOXFET-biased, ''edge-on'' silicon strip detectors for X-ray imaging

被引：36

作者：

Arfelli, F

Bonvicini, V

Bravin, A

Burger, P

Cantatore, G

Castelli, E

DiMichiel, M

Longo, R

Olivo, A

Pani, S

Pontoni, D

Poropat, P

Prest, M

Rashevsky, A

Tromba, G

Vacchi, A

Zampa, N

机构：

[1] UNIV TRIESTE,DIPARTIMENTO FIS,TRIESTE,ITALY

[2] IST NAZL FIS NUCL,TRIESTE,ITALY

[3] CANBERRA SEMICOND NV,OLEN,BELGIUM

[4] SOC SINCROTRONE TRIESTE,TRIESTE,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 385卷 / 02期

关键词：

D O I：

10.1016/S0168-9002(96)01076-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A silicon strip detector for the SYRMEP (SYnchrotron Radiation for MEdical Physics) experiment has been designed and realised. The main features of this detector are AC-coupling through integrated coupling capacitors, DC bias of the strips by means of a gated punch-through structure, bulk contact on the junction side through a forward-biased p(+) implant, thinned entrance window for the incoming radiation (in an ''edge-on'' geometry) and integrated fan-in on active silicon. Results of laboratory tests of the detector parameters, allowing a thorough evaluation of the technological solutions employed, are presented.

引用

页码：311 / 320

页数：10

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