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Gate oxide scaling limits and projection
被引：119
作者：
Hu, CM
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.553593
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
MOSFET gate oxide.scaling limits are examined with respect to time-dependent breakdown, defects, plasma process damage, mobility degradation, poly-gate depletion, inversion layer thickness, tunneling leakage, charge trapping, and gate delay. It is projected that the operating field will stay around 5MV/cm for reliability and optimum speed. Tunneling leakage prevents scaling below 2nm, which is sufficient for MOSFET scaling to 0.05 mu m.
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页码：319 / 322
页数：4
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