Self-gating of ion channels in cell adhesion

被引:15
作者
Fromherz, P
机构
[1] Department of Membrane and Neurophysics, Max-Planck-Institute for Biochemistry, Martinsried
关键词
D O I
10.1103/PhysRevLett.78.4131
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
When a cell membrane is attached to an inert surface, ionic current may flow from the bath along the narrow cleft between membrane and surface into the cell kept at constant potential. This current modifies the voltage across the membrane due to the voltage drop in the cleft. As a result, the conductance of voltage-gated ion channels is affected. By positive feedback, smooth gating is transformed into switching with bistability, hysteresis, and memory as shown by cable theory. Self-gating in cell adhesion is triggered by minute modulations of the attachment or of the intracellular potential.
引用
收藏
页码:4131 / 4134
页数:4
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