Device physics and simulation of metal/ferroelectric-film p-type silicon capacitors

This paper introduces an electrostatic model for Metal/Ferroelectric/Silicon (MFS) capacitors. These structures consist of a metal gate, a dielectric stack which includes a ferroelectric film, and a p-type silicon substrate. The dielectric stack consists of a switching ferroelectric layer and two nonswitching dielectric or buffer layers. This model predicts the dependence of the polarization charge density P-d, the electric field in the ferrolelectric film E-fe, the voltage across the dielectric stack V-OX, the semiconductor surface potential psi(SC), and the semiconductor charge density Q(SC) on the gate-to-bulk voltage V-GB under static conditions. The low- and high-frequency capacitance-voltage characteristics of MFS capacitors are calculated.