Self-aligned nanolenses with multilayered Ge/SiO2 core/shell structures on Si (001)

被引：6

作者：

Chen, Huai-Chung ^{[1
]}

Lee, Sheng-Wei ^{[1
]}

Chen, Lih-Juann ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 02期

关键词：

D O I：

10.1002/adma.200600307

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Selective etching of multilayered Ge-quantum-dot/Si-spacer has been used to fabricate stacked Ge@SiO2 nanolenses with the ability to filter and focus 1.5 mu m light. These lenses have potential for use as Si-compatible photodetector materials for telecommunications. The left figure is a schematic sketch of the nanolenses and the right figure is a transmission electron microscopy image of the lenses.

引用

页码：222 / +

页数：6

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