Electronic structure origins of polarity-dependent high-TC ferromagnetismin oxide-diluted magnetic semiconductors

被引：473

作者：

Kittilstved, KR ^{[1
]}

Liu, WK ^{[1
]}

Gamelin, DR ^{[1
]}

机构：

[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

NATURE MATERIALS | 2006年 / 5卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1038/nmat1616

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Future spintronics technologies based on diluted magnetic semiconductors (DMSs) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. Discoveries of room-temperature ferromagnetism in wide-bandgap DMSs hold great promise, but this ferromagnetism remains poorly understood. Here we demonstrate a close link between the electronic structures and polarity-dependent high-T-C ferromagnetism of TM2+: ZnO DMSs, where TM2+ denotes 3d transition metal ions. Trends in ferromagnetism across the 3d series of TM2+: ZnO DMSs predicted from the energies of donor- and acceptor-type excited states reproduce experimental trends well. These results provide a unified basis for understanding both n- and p-type ferromagnetic oxide DMSs.

引用

页码：291 / 297

页数：7

共 45 条

[1] Low-temperature activation and deactivation of high-Curie-temperature ferromagnetism in a new diluted magnetic semiconductor:: Ni2+-doped SnO2 [J].