40-Gbit/s ICs for future lightwave communications systems

被引：17

作者：

Otsuji, T

Sano, E

Imai, Y

Enoki, T

机构：

来源：

GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/GAAS.1996.567627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-mu m gate InAlAs/InGaAs HEMTs with InP recess etch stopper was adopted mainly for IC fabrication Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing and amplifying operation at 40 Gbit/s.

引用

页码：14 / 17

页数：4