Multiple quantum well photodiode with lateral p-n-junctions

被引：3

作者：

Aroutionian, VM

Petrosyan, SG ^{[1
]}

Yesayan, AE

机构：

[1] Yerevan State Univ, Dept Radiophys, Yerevan 375025, Armenia

[2] Yerevan State Univ, Dept Phys Semicond, Yerevan 375025, Armenia

[3] Russian Armenian Univ, Yerevan 375051, Armenia

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

quantum well; lateral photodiode; p-n-junction;

D O I：

10.1016/j.tsf.2003.11.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report calculations of the responsivity and its spectral dependence of GaAs/GaAlAs quantum well (QW) lateral photodiode under steady-state illumination. The spectral response mainly reflects the features of the QW absorption spectrum. The responsivity increases linearly with applied voltage and at moderate voltages can exceed 1 A/W. (C) 2003 Elsevier B.V. All rights reserved.

引用

收藏

页码：389 / 392

页数：4

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