Defect physics of the CuInSe2 chalcopyrite semiconductor

The activation energies of acceptor E-A and donor levels E-D in the chalcopyrite compound CuInSe2 are calculated by using a simpler model based in the effective-mass theory for the case of single, double and triple point defect centers. Despite of the simplicity of this model, it is found that the values of E-A and E-D thus calculated for shallow and deep levels are in reasonable agreement with those reported from the experimental data. In the case of not shallow donor levels values of E-D in good agreement with these data are calculated by using the free electron mass m(0) instead of the effective electron mass. From the analysis of the results, most of these levels have been identified as due to the presence of several native point defects. (C) 1999 Elsevier Science Ltd. All rights reserved.