ALD of scandium oxide from scandium Tris(N,N′-diisopropylacetamidinate) and water

被引：42

作者：

de Rouffignac, P ^{[1
]}

Yousef, AP ^{[1
]}

Kim, KH ^{[1
]}

Gordon, RG ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 06期

关键词：

D O I：

10.1149/1.2191131

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Sc2O3 films were deposited by atomic layer deposition (ALD) from a new precursor scandium tris(N,N-'-diisopropylacetamidinate) and water. The precursor is thermally stable (> 350 degrees C), volatile, with good reactivity to HF-last silicon. A growth rate of 0.3 A/cycle was obtained at 290 degrees C. The films were pure (C,N < 0.5 atom %) and had a refractive index of 1.8. Reactive ion etching tests on ALD scandia showed an etch rate 18 times slower than ALD hafnia. Electrical measurements showed a high permittivity of similar to 17, and a leakage current density of < 3x10(-3) A/cm(2) for an equivalent oxide thickness of 1.8 nm at 1.0 V. (c) 2006 The Electrochemical Society.

引用

页码：F45 / F48

页数：4

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