Three-dimensional diamond growth film simulations: correlations between nucleation and surface parameters

被引:4
作者
Barrat, S [1 ]
Guillemot, G [1 ]
Patte, L [1 ]
Bauer-Grosse, E [1 ]
机构
[1] Ecole Mines, Lab Sci & Genie Surfaces, UMR 7570, F-54042 Nancy, France
关键词
computer simulation; growth; modeling; diamond films;
D O I
10.1016/S0925-9635(98)00302-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The development of a three-dimensional simulation of the diamond nucleation and growth presented in a previous payer has been used in this study to determine surface parameters such as the roughness, R-a, and porosity (filling factor Q) of diamond film, according to the crystal size (via the radius R) and the nucleation density N. Evolutions of these surface parameters are compared to values obtained by a statistical treatment (Poisson's law) based on the random nucleation and subsequent growth of hemispheres. In particular, we study the roughness variations with the parameter lambda=pi (RN)-N-2, which seems to be the key variable in the case of coatings whose nucleation and growth are in agreement with the Volmer-Weber mechanism. From these results, it is possible to calculate some surface parameters that are useful for tribological and optical applications and whose evolutions with synthesis time have not been reported to our knowledge. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:150 / 154
页数:5
相关论文
共 15 条
[1]   Diamond deposition by chemical vapor deposition process: Study of the bias enhanced nucleation step [J].
Barrat, S ;
Saada, S ;
Dieguez, I ;
Bauer-Grosse, E .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :1870-1880
[2]   Three-dimensional simulation of CVD diamond film growth [J].
Barrat, S ;
Pigeat, P ;
BauerGrosse, E .
DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) :276-280
[3]   Initial growth phase of diamond thin films observed by thermal emission spectrometry [J].
Barrat, S ;
Pigeat, P ;
Dieguez, I ;
BauerGrosse, E ;
Weber, B .
THIN SOLID FILMS, 1997, 304 (1-2) :98-105
[4]   OBSERVATION OF SPECTRAL AND NORMAL EMISSIVITY AS A METHOD OF SURFACE CONTROL DURING THE GROWTH OF DIAMOND FILMS DEPOSITED BY A MICROWAVE PLASMA-ASSISTED CVD TECHNIQUE [J].
BARRAT, S ;
PIGEAT, P ;
DIEGUEZ, I ;
BAUERGROSSE, E ;
WEBER, B .
THIN SOLID FILMS, 1995, 263 (02) :127-133
[5]   Strength, fracture and friction properties of diamond [J].
Field, JE ;
Pickles, CSJ .
DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) :625-634
[6]  
Hallings J., 1975, PRINCIPLES TRIBOLOGY
[7]   Recent developments in heteroepitaxial nucleation and growth of diamond on silicon [J].
Jiang, X ;
Klages, CP .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1996, 154 (01) :175-183
[8]   CHARACTERIZATION OF DIAMOND FILMS FOR OPTICAL COATINGS [J].
KO, HW ;
HSU, SE ;
YANG, SJ ;
TSAI, MS ;
LEE, YH ;
LEE, YH .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :694-698
[9]   On the mechanisms of bias enhanced nucleation of diamond [J].
Kulisch, W ;
Ackermann, L ;
Sobisch, B .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 154 (01) :155-174
[10]   Fretting friction and wear of polycrystalline diamond coatings [J].
Liu, E ;
Blanpain, B ;
Celis, JP .
DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) :649-653