Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

GaSb-based heterostructures with strained-layer GaSb/Ga1-xInxSb(x = 0.26 or x = 0.35) single quantum wells and Al0.5Ga0.5Sb cladding layers were grown by molecular beam epitaxy. The thickness of the GalnSb well was varied from 3.0 to 14.5 nm. Intense room-temperature electroluminescence was observed from mesa diodes with peak emission wavelengths in the 1.9-2.2 mu m spectral range. The dependence of emission energy on well thickness is consistent with the predictions obtained by an effective mass treatment assuming a rectangular type I quantum well and a conduction band offset Delta E(c) = 0.6 Delta E(g).