Investigations into a low band gap, semiconducting polymer

被引：13

作者：

Mills, CA ^{[1
]}

Taylor, DM ^{[1
]}

Murphy, PJ ^{[1
]}

Dalton, C ^{[1
]}

Jones, GW ^{[1
]}

Hall, LM ^{[1
]}

Hughes, AV ^{[1
]}

机构：

[1] Univ Coll N Wales, Inst Mol & Biomol Elect, Bangor LL57 1UT, Gwynedd, Wales

来源：

SYNTHETIC METALS | 1999年 / 102卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

electrochemical polymerisation; semiconducting films; low-bandgap conjugated polymers;

D O I：

10.1016/S0379-6779(98)01170-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low bandgap polymer based on a carbon-bridged dithienyl monomer has been prepared by potentiostatic electrodeposition. Microscopic analysis of the polymer revealed a generally smooth morphology with scattered features protruding from the surface. Raman mapping shows the presence of a thickness dependent fluorescence in the film. Al/polymer/ITO Schottky diodes based on this new polymer show a small degree of rectification.

引用

页码：1000 / 1001

页数：2