Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

被引：5

作者：

Lane, B

Wu, D

Yi, HJ

Diaz, J

Rybaltowski, A

Kim, S

Erdtmann, M

Jeon, H

Razeghi, M

机构：

[1] Center for Quantum Devices, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAsxSb1-x/InP1-x-yAsxSby double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results;Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results. (C) 1997 American Institute of Physics.

引用

页码：1447 / 1449

页数：3

共 13 条

[1] InAsSb-based mid-infrared lasers (3.8-3.9 mu m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition [J].