Advances in selective wet oxidation of AlGaAs alloys

被引：229

作者：

Choquette, KD ^{[1
]}

Geib, KM ^{[1
]}

Ashby, CIH ^{[1
]}

Twesten, RD ^{[1
]}

Blum, O ^{[1
]}

Hou, HQ ^{[1
]}

Follstaedt, DM ^{[1
]}

Hammons, BE ^{[1
]}

Mathes, D ^{[1
]}

Hull, R ^{[1
]}

机构：

[1] UNIV VIRGINIA, DEPT MAT SCI, CHARLOTTESVILLE, VA 22903 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 03期

关键词：

materials processing; materials science and technology; optoelectronic device; semiconductor device fabrication; semiconductor lasers;

D O I：

10.1109/2944.640645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review the chemistry, microstructure, and processing of buried oxides converted from AlGaAs layers using wet oxidation. Hydrogen is shown to have a central role in the oxidation reaction as the oxidizing agent and to reduce the intermediate product As2O3 to As. The stable oxide is amorphous (AlxGa1-x)(2)O-3 which has no defects along the oxide/semiconductor interfaces but can exhibit strain at the oxide terminus due to volume shrinkage. The influence of gas flow, gas composition, temperature, Al-content, and layer thickness on the oxidation rate are characterized to establish a reproducible process. Linear oxidation sates with Arrhenius activation energies which strongly depend upon AlAs mole fraction are found. The latter produces strong oxidation selectivity between AlGaAs layers with slightly differing Al-content. Oxidation selectivity to thickness is also shown for layer thickness <60 nm, Differences between the properties of buried oxides converted from AlGaAs and AlAs layers and the impact on selectively oxidized vertical cavity laser lifetime are reported.

引用

页码：916 / 926

页数：11

共 55 条

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